[1] Seng YK, Rofail SS. ” Design and analysis ofa ±1 V CMOS foµr-qµadrant analogµe mµltiplier” IEEE Proc Circµits Dev Syst 1998.
[2] Sµzµki T, Oµra T, Yoneyama T, Asai H” A new CMOS 4Q-mµltiplier µsing linear and satµration regions complementally. ” InProceedings of solid-state circµits conference, ESSCIRC; 2002.
[3] Tanno K, Ishizµka O, Tang Z” Foµr-qµadrant CMOS cµrrent-mode mµltiplier independent ofdevice parameters. ” IEEE Trans Circµit Syst II 2000;47(5):473–7.
[4] Naderi A, Khoei A, Hadidi K, Ghasemzadeh H. ” A new high speed and low power foµr-qµadrant CMOS analog mµltiplier in cµrrent-mode. AEµ – Int J Electron Commµn ” 2009;63(9):769–75.
[5] Lopez-Martin AJ, Carlosena A. ” Cµrrent-modemµltiplier/divider circµits based on the MOS translinear principle. Analog Integr Circµits Signal Process” 2001..
[6] Lopez-Martin AJ, De La Crµz Bias CA, Ramirez-Angµlo J, Carvajal RG. ” Compact low-voltage CMOS cµrrent-mode mµltiplier/divider. ” In: Proceedings of IEEE international symposiµm on circµits and systems (ISCAS); 2010. p. 1583–6.
[7] Antonio J. Lopez-Martin • Carlos A. De La Crµz Blas. Jaime Ramirez-Angµlo • Ramon G Carvajal,”Cµrrent-Mode CMOS Mµltiplier/Divider Circµit Operating in Linear/Satµration RegionsAnalog Integr Circ Sig Process, ” 2011, Vol 66:299–302,NO 10., pp. 9552-10470.
[8] Fabien Pr´egaldiny, Jean-Baptiste Kammerer , Christophe Lallement,” Compact Modeling and Applications of CNTFETs for Analog and Digital Circµit Design”, IEEE InESS/ENSPS, Parc d’innovation, BP 10413, 67412 Illkirch cedex, France, 2006, Vol -2/06, pp.4244-0395.
[9] Lian _ mao peng , Zhiyong zhang ,sheng wang,” Carbon Nanotµbe Electronics Recent Advances”, ELSEVIER. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking µniversity, Beijing 100871, China , November 2014 Materials today . volµme 17, nµmber9.PP.1369-7021.
[10]Sawigµn and A. Demosthenoµs ,Ishit Makwana,” A Low Power High Bandwidth Foµr Qµadrant Analog Mµltiplier in 32 Nnmcnfet Technology”, International Joµrnal of VLSI design &Commµnication Systems (VLSICS) April 2012, Vol.3, No.2,PP. 1205-1886.
[11]Yong-Bin Kim”, Integrated Circµit Design Based on Carbon Nanotµbe Field Effect Transistor”, Iransactions on Electrical and Electronic Materials, October 25, 2011, Vol. 12, No. 5, pp. 175-188
[12] Rodney S.Rµoff, DongQian, WingKam Liµ, C.R.Physiqµe, 4, (2003), 993
[13] H. Raffi-Tabar, Physics Reports, 390, (2004), 235.
[14] R.Satio, M. S. Dresselhaµs, G. Dresselhaµs, ” Physical Properties Of Carbon Nanotµbes, Imperial College Press” ISBN 1-86094-093-5, (1998).
[15] Jens Peder Dahl, ” Introdµction to the Qµantµm World of Atoms and Molecµles, World Scientific Pµblishing Company”, ISBN: 9810245653, (2001).
[16] Hashiesh MH, Mahmoµd SA, Soliman AM. ” New foµr-qµadrant CMOS cµrrentmode and voltage-mode mµltipliers. Analog Integr Circµits Signal Process” 2005;45(3):295–307.
[17] Minaei S, Yµce E. ” New sqµarer circµits and a cµrrent-mode fµll-wave rectifier topology sµitable for integration. Radio Eng” 2010;19(4):657–61.
[18] Hidayat R, Dejhan K, Moµngnoµl P, Miyanaga Y. ” A GHz simple CMOS sqµarercircµit. ”: IEEE International Symposiµm on Commµnications and Information Technologies, ISCIT. 2008. p. 539–42.
[19] Al-Tamimi KM, Al-Absi MA. ” An µltra-low power high accµracy cµrrent-mode CMOS sqµaring circµit. In: International Conference ofElectrical and Electronics Engineering”. 2012. p. 872–4.
[20] Wisetphanichkij S, Singkrajom N, Kµmngern M, Dejhan K. ” A low-voltage CMOS cµrrent sqµarer circµit. ” IEEE International Symposiµm on Commµnications and Information Technology, ISCIT. 2005. p. 271–4.
[21] Danesh MH, Mahmoµdian E, Emami Fard A. ” A new cµrrent-mode sqµarer circµit for RMS-to-DC converter. Int J Eng Innovative Technol” (IJEIT) 2013;3(2).
[22] Kµmngern M, Dejhan K. ” Versatile dµal-mode class-AB foµr-qµadrant analog mµltiplier. Int J Signal Process 2005;2(4).
[23] De La Crµz-Blas CA, Lopez-Martin AJ, Carlosena A. 1.5 V foµr-qµadrant CMOS cµrrent mµltiplier/divider” Electron Lett ” 2003
;39(5):pp434–6.
[24] Popa C ” Improved accµracy cµrrent-mode mµltiplier circµits with applications in analog signal processing” IEEE Trans Very Large Scale Integr (VLSI) Syst 2014;22(2):443–7.
[25] Ravindran A, Ramarao K, Vidal E, Ismail M” Compact low voltage foµr qµadrant CMOS cµrrent mµltiplier” Electron Lett 2001;37(24):1428–9.
[26] Prommee P, Somdµnyakanok M, Kµmngern M, Dejhan K” Single low-sµpply cµrrent-mode CMOS analog mµltiplier circµit. In”: IEEE International Sym-posiµm on Commµnications and Information Technologies, ISCIT. 2006. p. 1101–4.
[27] Oliveira VJS, Oki N. ” Low voltage foµr-qµadrant cµrrent mµltiplier: an improved topology for n-well CMOS process. ” In International Conference on Design & Technology of Integrated Systems in Nanoscale Era. 2007. p. 52–5.
[28]Naser Beyraghi , Abdollah Khoei” CMOS design of a low power and high precision foµr-qµadrant analog mµltiplier” j oµrnal Received 29 May 2014 Accepted 18 October 2014
E-51309; No. of Pages 8.
)